Diodes Incorporated DXTP03100BFG-7
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DXTP03100BFG-7
671-DXTP03100BFG-7
晶体管 - 双极性晶体管(BJT)- 单个
8-PowerVDFN
大陆
立即发货

PWR LOW SAT TRANSISTOR POWERDI33
1最小包装量--
DXTP03100BFG-7详情
Diodes Incorporated DXTP03100BFG-7重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
8-PowerVDFN
供应商器件包装
PowerDI3333-8 (SWP) Type UX
厂商
Diodes Incorporated
Package
Tape & Reel (TR)
Product Status
活跃
Current-Collector (Ic) (Max)
5 A
Transistor Polarity
PNP
MSL
MSL 1 - Unlimited
Qualification
-
Emitter- Base Voltage VEBO
7 V
Pd - Power Dissipation
1.07 W
Maximum Operating Temperature
+ 175 C
DC Collector/Base Gain hfe Min
100 at - 1 A, - 2 V
Collector-Emitter Saturation Voltage
177 mV
Unit Weight
0.001058 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
125 MHz
Manufacturer
Diodes Incorporated
Brand
Diodes Incorporated
Maximum DC Collector Current
10 A
DC Current Gain hFE Max
300 at - 1 A, - 2 V
Collector- Emitter Voltage VCEO Max
100 V
系列
-
操作温度
-55°C ~ 175°C (TJ)
包装
切割胶带
子类别
Transistors
技术
Si
配置
Single
功率耗散
1.5
功率 - 最大
1.07 W
产品类别
BJTs - Bipolar Transistors
晶体管类型
PNP
最小直流增益(hFE)@ Ic, Vce
100 @ 1A, 2V
最大集极截止电流
50nA
不同 Ib, Ic 时 Vce 饱和度(最大值)
340mV @ 400mA, 4A
电压 - 集射极击穿(最大值)
100 V
转换频率
320
频率转换
125MHz
集电极基极电压(VCBO)
140 V
连续集电极电流
100
产品类别
Bipolar Transistors - BJT
DXTP03100BFG-7拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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