Diodes Incorporated FXT651STOE
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FXT651STOE
671-FXT651STOE
晶体管 - 双极性晶体管(BJT)- 单个
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Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, E-LINE PACKAGE-3
1最小包装量--
FXT651STOE详情
Diodes Incorporated FXT651STOE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
引脚数
3
终端数量
3
晶体管元件材料
SILICON
Transition Frequency-Nom (fT)
140 MHz
Package Style
IN-LINE
Package Shape
RECTANGULAR
Package Body Material
PLASTIC/EPOXY
Number of Elements
1
Package Description
IN-LINE, R-PSIP-T3
Ihs Manufacturer
DIODES INC
Part Life Cycle Code
Obsolete
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
JESD-30代码
R-PSIP-T3
资历状况
不合格
配置
SINGLE
晶体管应用
SWITCHING
极性/通道类型
NPN
集电极电流-最大值(IC)
2 A
最小直流增益(hFE)
100
集电极-发射器电压-最大值
60 V
FXT651STOE拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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