Diodes Incorporated MBR1060CT-G
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MBR1060CT-G
671-MBR1060CT-G
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MBR1060CT-G datasheet pdf and Integrated Circuits (ICs) product details from Diodes Incorporated stock available at utmel
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MBR1060CT-G详情
Diodes Incorporated MBR1060CT-G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
二极管元件材料
SILICON
终端数量
3
Manufacturer Part Number
MBR1060CT-G
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
R-PSFM-T3
Risk Rank
5.33
Moisture Sensitivity Levels
1
Number of Elements
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Reflow Temperature-Max (s)
未说明
应用
GENERAL PURPOSE
附加功能
FREE WHEELING DIODE, HIGH RELIABILITY
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
COMMON CATHODE, 2 ELEMENTS
二极管类型
接收电极
箱体转运
CATHODE
输出电流-最大值
10 A
相位的数量
1
JEDEC-95代码
TO-220AB
最大非代表Pk前进电流
125 A
MBR1060CT-G拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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