Diodes Incorporated MMBZ33VAL
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MMBZ33VAL
671-MMBZ33VAL
集成电路(IC)
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24W And 40W Peak Power Dual Surface Mount Tvs
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MMBZ33VAL详情
Diodes Incorporated MMBZ33VAL重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
二极管元件材料
SILICON
终端数量
3
Manufacturer Part Number
MMBZ33VAL
Rohs Code
有
Part Life Cycle Code
活跃
Ihs Manufacturer
NEXPERIA
Package Description
PLASTIC PACKAGE-3
Risk Rank
1.42
Moisture Sensitivity Levels
1
Number of Elements
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
Power Dissipation (Max)
0.36 W
Reflow Temperature-Max (s)
30
JESD-609代码
e3
ECCN 代码
EAR99
端子表面处理
Tin (Sn)
附加功能
IEC-61643-321
HTS代码
8541.10.00.50
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
参考标准
AEC-Q101; IEC-60134; IEC-61000-4-2
JESD-30代码
R-PDSO-G3
极性
UNIDIRECTIONAL
配置
COMMON ANODE, 2 ELEMENTS
二极管类型
跨压抑制二极管
Rep Pk反向电压-最大值
26 V
JEDEC-95代码
TO-236AB
最大非代表峰值转速功率Dis
40 W
击穿电压-最小值
31.35 V
击穿电压-最大值
34.65 V
MMBZ33VAL拓展信息
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