Diodes Incorporated MMDT5111W
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MMDT5111W
671-MMDT5111W
晶体管 - 双极性晶体管(BJT)- 单个
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MMDT5111W datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at utmel
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MMDT5111W详情
Diodes Incorporated MMDT5111W重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
引脚数
3
EU RoHS
Compliant
ECCN (US)
EAR99
HTS
8541.21.00.95
Automotive
无
PPAP
无
Maximum Collector-Emitter Voltage (V)
50
Maximum Continuous DC Collector Current (mA)
100
Minimum DC Current Gain
35@10mA@5V
Typical Current Gain Bandwidth (MHz)
250
Typical Input Resistor (kohm)
10
Typical Resistor Ratio
1
Maximum Power Dissipation (mW)
200
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Commercial
Mounting
表面贴装
Package Width
1.25
Package Length
2
PCB changed
3
Supplier Package
SOT-323
包装
卷带
零件状态
活跃
类型
PNP
配置
Single
MMDT5111W拓展信息
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated
Diodes Incorporated







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