Diotec Semiconductor AG GBI10B

表面安装

NO

二极管元件材料

SILICON

终端数量

4

Peak Reverse Current (uA)

5

Peak Reverse Recovery Time (ns)

1500(Typ)

Minimum Operating Temperature (°C)

-50

Maximum Operating Temperature (°C)

150

Supplier Temperature Grade

Commercial

Military

无

Mounting

通孔

Package Height

20

Package Length

30

Package Width

4.6

PCB changed

4

ECCN (US)

EAR99

Bridge Type

单相

Peak Reverse Repetitive Voltage (V)

100

Peak Average Forward Current (A)

10

Peak RMS Reverse Voltage (V)

70

Peak Non-Repetitive Forward Surge Current (A)

200

Peak Forward Voltage (V)

1.1@5A

Package Description

R-PSIP-T4

Package Style

IN-LINE

Moisture Sensitivity Levels

1

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

GBI10B

Package Shape

RECTANGULAR

Manufacturer

Diotec Semiconductor AG

Number of Elements

4

Part Life Cycle Code

活跃

Ihs Manufacturer

DIOTEC SEMICONDUCTOR AG

Forward Voltage-Max (VF)

1.05 V

Risk Rank

2.25

包装

Box

JESD-609代码

e3

零件状态

活跃

ECCN 代码

EAR99

端子表面处理

Matte Tin (Sn) - annealed

附加功能

UL 认证

HTS代码

8541.10.00.80

子类别

桥式整流二极管

端子位置

SINGLE

终端形式

THROUGH-HOLE

峰值回流焊温度（摄氏度）

260

Reach合规守则

not_compliant

引脚数量

4

JESD-30代码

R-PSIP-T4

资历状况

不合格

配置

Single

二极管类型

桥式整流二极管

输出电流-最大值

3 A

相位的数量

1

Rep Pk反向电压-最大值

100 V

最大非代表Pk前进电流

200 A

RoHS状态

是,有豁免