Eaton 635760835014

包装/外壳

TO-92-3

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.016000 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

通孔

Forward Transconductance - Min

0.75 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

6.2 nC

Rds On - Drain-Source Resistance

9.3 Ohms

RoHS

Details

Typical Turn-Off Delay Time

13 ns

Id - Continuous Drain Current

300 mA

系列

FQN1N60C

包装

弹药包

类型

MOSFET

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

21 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.19 mm

高度

5.33 mm

长度

5.2 mm