XTAR072D11E5E100详情
Eaton XTAR072D11E5E100重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
Emitter- Base Voltage VEBO
6 V
Pd - Power Dissipation
225 mW
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
50 at 10 mA, 10 V
Collector-Emitter Saturation Voltage
750 mV
Unit Weight
0.000296 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
50 MHz
Manufacturer
Panjit
Brand
Panjit
Maximum DC Collector Current
300 mA
DC Current Gain hFE Max
200 at 10 mA, 10 V
RoHS
Details
Collector- Emitter Voltage VCEO Max
400 V
系列
HVT-03TN
包装
MouseReel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
500 V
连续集电极电流
300 mA
产品类别
Bipolar Transistors - BJT
XTAR072D11E5E100拓展信息








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