Eaton XTAR072D11E5E100

包装/外壳

SOT-23-3

Emitter- Base Voltage VEBO

6 V

Pd - Power Dissipation

225 mW

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

50 at 10 mA, 10 V

Collector-Emitter Saturation Voltage

750 mV

Unit Weight

0.000296 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Gain Bandwidth Product fT

50 MHz

Manufacturer

Panjit

Brand

Panjit

Maximum DC Collector Current

300 mA

DC Current Gain hFE Max

200 at 10 mA, 10 V

RoHS

Details

Collector- Emitter Voltage VCEO Max

400 V

系列

HVT-03TN

包装

MouseReel

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

500 V

连续集电极电流

300 mA

产品类别

Bipolar Transistors - BJT