参数名
参数值
参数名
参数值
包装/外壳
TO-126-3
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
7 W
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
40
Collector-Emitter Saturation Voltage
600 mV
Unit Weight
0.026843 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1920
Mounting Styles
通孔
Gain Bandwidth Product fT
150 MHz
Part # Aliases
KSC3503DSTU_NL
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum DC Collector Current
100 mA
DC Current Gain hFE Max
320
RoHS
Details
Collector- Emitter Voltage VCEO Max
300 V
系列
KSC3503
包装
Tube
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
300 V
连续集电极电流
0.1 A
产品类别
Bipolar Transistors - BJT
宽度
3.25 mm
高度
11 mm
长度
8 mm