E-Switch 520.02.06

包装/外壳

TO-220-3

Emitter- Base Voltage VEBO

9 V

Pd - Power Dissipation

80 W

Transistor Polarity

NPN

Maximum Operating Temperature

+ 150 C

DC Collector/Base Gain hfe Min

8

Collector-Emitter Saturation Voltage

3 V

Unit Weight

0.103066 oz

Minimum Operating Temperature

-

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Gain Bandwidth Product fT

4 MHz

Part # Aliases

FJP13007H2TU_F080

Manufacturer

onsemi

Brand

onsemi / Fairchild

Maximum DC Collector Current

8 A

DC Current Gain hFE Max

60

RoHS

Details

Collector- Emitter Voltage VCEO Max

400 V

系列

FJP13007

包装

Tube

子类别

Transistors

技术

Si

配置

Single

产品类别

BJTs - Bipolar Transistors

集电极基极电压(VCBO)

700 V

产品类别

Bipolar Transistors - BJT