FDD5612详情
Fairchild FDD5612重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252, (D-Pak)
Package
零售包装
厂商
Glenair
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Power Dissipation (Max)
3.8W (Ta), 42W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3V @ 250µA
系列
*
操作温度
-55°C ~ 175°C (TJ)
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
55mOhm @ 5.4A, 10V
输入电容(Ciss)(Max)@Vds
660 pF @ 30 V
门极电荷(Qg)(最大)@Vgs
11 nC @ 10 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
场效应管特性
-
FDD5612拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor








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