Fairchild Semiconductor FQB8N60CFTM

安装类型

表面贴装

包装/外壳

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

供应商器件包装

D2PAK (TO-263)

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

6.26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Fairchild Semiconductor

Power Dissipation (Max)

147W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

FRFET®

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.5Ohm @ 3.13A, 10V

输入电容(Ciss)(Max)@Vds

1255 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

36 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

场效应管特性

-