Fairchild Semiconductor FQP2N60

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220-3

Package

Tube

Current - Continuous Drain (Id) @ 25℃

2.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Fairchild Semiconductor

Power Dissipation (Max)

64W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

QFET®

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.7Ohm @ 1.2A, 10V

输入电容(Ciss)(Max)@Vds

350 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

11 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

场效应管特性

-