Fairchild Semiconductor FQPF7P06

包装/外壳

TO-220-3 Full Pack

安装类型

通孔

供应商器件包装

TO-220F-3

Package

Tube

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

Product Status

Obsolete

Power Dissipation (Max)

24W (Tc)

厂商

Fairchild Semiconductor

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

5.3A (Tc)

系列

QFET®

操作温度

-55°C ~ 175°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

410mOhm @ 2.65A, 10V

输入电容(Ciss)(Max)@Vds

295 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

8.2 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±25V

场效应管特性

-