Fairchild Semiconductor HGT1S7N60C3D
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HGT1S7N60C3D
836-HGT1S7N60C3D
传感器,变送器
TO-262-3 Long Leads, I²Pak, TO-262AA
大陆
立即发货

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA, TO-262, 3PIN
--最小包装量--
HGT1S7N60C3D详情
Fairchild Semiconductor HGT1S7N60C3D重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件包装
I2PAK (TO-262)
Package
Bulk
Current-Collector (Ic) (Max)
14 A
厂商
Fairchild Semiconductor
Product Status
活跃
Test Conditions
-
操作温度
-40°C ~ 150°C (TJ)
系列
-
输入类型
Standard
功率 - 最大
60 W
电压 - 集射极击穿(最大值)
600 V
不同 Vge、Ic 时 Vce(on)(最大值)
2V @ 15V, 7A
IGBT类型
-
闸门收费
38 nC
集极脉冲电流(Icm)
56 A
Td(开/关)@25°C
-
开关能量
-
反向恢复时间(trr)
25 ns
HGT1S7N60C3D拓展信息
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor
Fairchild Semiconductor







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