Fairchild Semiconductor RFD4N06LSM9A

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252, (D-Pak)

Package

Bulk

Current - Continuous Drain (Id) @ 25℃

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

厂商

Fairchild Semiconductor

Power Dissipation (Max)

30W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

操作温度

-55°C ~ 175°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

600mOhm @ 1A, 5V

门极电荷(Qg)(最大)@Vgs

8 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±10V

场效应管特性

-