参数名
参数值
参数名
参数值
表面安装
YES
终端数量
52
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
33 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.070548 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
120 mOhms
RoHS
Details
Id - Continuous Drain Current
30 A
Package Description
QCCJ, LDCC52,.8SQ
Package Style
CHIP CARRIER
Number of Words Code
16000
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
LDCC52,.8SQ
Access Time-Max
20 ns
Operating Temperature-Max
70 °C
Rohs Code
无
Manufacturer Part Number
MCM62990FN20
Number of Words
16384 words
Supply Voltage-Nom (Vsup)
5 V
Package Code
QCCJ
Package Shape
SQUARE
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MOTOROLA SEMICONDUCTOR PRODUCTS
Risk Rank
5.91
系列
600V SJ MOSFET
包装
MouseReel
JESD-609代码
e0
端子表面处理
Tin/Lead (Sn/Pb)
子类别
MOSFETs
技术
Si
端子位置
QUAD
终端形式
J BEND
端子间距
1.27 mm
JESD-30代码
S-PQCC-J52
资历状况
不合格
电源
5 V
温度等级
COMMERCIAL
通道数量
1 Channel
操作模式
SYNCHRONOUS
电源电流-最大值
0.36 mA
组织结构
16KX16
输出特性
3-STATE
内存宽度
16
产品类别
MOSFET
待机电流-最大值
0.08 A
记忆密度
262144 bit
并行/串行
PARALLEL
I/O类型
COMMON
内存IC类型
标准SRAM
待机电压-最小值
4.5 V
产品
MOSFET
产品类别
MOSFET
达到SVHC
unknown