Freescale Semiconductor, Inc. (NXP Semiconductors) BLC8G20LS-400AVZ

EU RoHS

Compliant

ECCN (US)

EAR99

Automotive

Unknown

PPAP

Unknown

Channel Mode

Enhancement

Number of Elements per Chip

2

Process Technology

LDMOS

Maximum Drain Source Voltage (V)

65

Maximum Gate Source Voltage (V)

13

Maximum Gate Threshold Voltage (V)

2.3

Maximum VSWR

10

Maximum Gate Source Leakage Current (nA)

280

Maximum IDSS (uA)

2.8

Maximum Drain Source Resistance (mOhm)

[email protected]

Typical Forward Transconductance (S)

19

Output Power (W)

475(Typ)

Typical Power Gain (dB)

15.5

Maximum Frequency (MHz)

2000

Minimum Frequency (MHz)

1800

Typical Drain Efficiency (%)

44

Minimum Operating Temperature (°C)

-65

Maximum Operating Temperature (°C)

225

包装

Tray

零件状态

Obsolete

配置

双共源

信道型

N

操作方式

1-Carrier W-CDMA