Freescale Semiconductor, Inc. (NXP Semiconductors) BUK9K29-100E,115

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

有

PPAP

Unknown

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

2

Maximum Drain Source Voltage (V)

100

Maximum Gate Source Voltage (V)

10

Maximum Gate Threshold Voltage (V)

2.1

Maximum Continuous Drain Current (A)

30

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

27@10V

Typical Gate Charge @ Vgs (nC)

54@10V

Typical Gate Charge @ 10V (nC)

54

Typical Input Capacitance @ Vds (pF)

2618@25V

Maximum Power Dissipation (mW)

68000

Typical Fall Time (ns)

35.1

Typical Rise Time (ns)

6.4

Typical Turn-Off Delay Time (ns)

67.3

Typical Turn-On Delay Time (ns)

6.1

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

1.05(Max)

Package Width

4.7(Max)

Package Length

5.3(Max)

PCB changed

8

Supplier Package

LFPAK-D

包装

卷带

零件状态

活跃

引脚数量

8

配置

双排双泄

信道型

N