Freescale Semiconductor, Inc. (NXP Semiconductors) PMXB120EPEZ

EU RoHS

Compliant

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

TMOS

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

2.5

Operating Junction Temperature (°C)

-55 to 150

Maximum Continuous Drain Current (A)

2.4

Maximum Gate Source Leakage Current (nA)

10000

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

120@10V

Typical Gate Charge @ Vgs (nC)

6.2@10V

Typical Gate Charge @ 10V (nC)

6.2

Typical Gate to Drain Charge (nC)

1.1

Typical Gate to Source Charge (nC)

0.9

Typical Input Capacitance @ Vds (pF)

309@15V

Typical Reverse Transfer Capacitance @ Vds (pF)

32@15V

Minimum Gate Threshold Voltage (V)

1

Typical Output Capacitance (pF)

41

Maximum Power Dissipation (mW)

1070

Typical Fall Time (ns)

7

Typical Rise Time (ns)

11

Typical Turn-Off Delay Time (ns)

16

Typical Turn-On Delay Time (ns)

4

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

150

Maximum Power Dissipation on PCB @ TC=25°C (W)

1070

Maximum Pulsed Drain Current @ TC=25°C (A)

10

Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

312

Typical Diode Forward Voltage (V)

0.8

Typical Gate Plateau Voltage (V)

2.7

Maximum Diode Forward Voltage (V)

1.2

Typical Gate Threshold Voltage (V)

1.5

Maximum Positive Gate Source Voltage (V)

20

Maximum Continuous Drain Current on PCB @ TC=25°C (A)

2.4

Mounting

表面贴装

Package Height

0.36(Max)

Package Width

1

Package Length

1.1

PCB changed

3

Supplier Package

DFN-D EP

包装

卷带

零件状态

活跃

引脚数量

3

配置

Single

信道型

P