Freescale Semiconductor, Inc. (NXP Semiconductors) PSMN0R9-30YLDX

EU RoHS

符合免除

ECCN (US)

EAR99

HTS

8541.29.00.95

SVHC

有

SVHC Exceeds Threshold

有

Automotive

无

PPAP

无

Category

功率MOSFET

Process Technology

NextPowerS3

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

30

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

2.2

Maximum Continuous Drain Current (A)

300

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (MOhm)

0.87@10V

Typical Gate Charge @ Vgs (nC)

109@10V|[email protected]

Typical Gate Charge @ 10V (nC)

109

Typical Input Capacitance @ Vds (pF)

7668@15V

Maximum Power Dissipation (mW)

291000

Typical Fall Time (ns)

42.6

Typical Rise Time (ns)

49.8

Typical Turn-Off Delay Time (ns)

63

Typical Turn-On Delay Time (ns)

38.1

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

表面贴装

Package Height

1.1(Max)

Package Width

4.7(Max)

Package Length

5.3(Max)

PCB changed

4

Tab

Tab

Supplier Package

LFPAK

包装

卷带

零件状态

活跃

引脚数量

5

配置

单一三源

信道型

N