Fujitsu 2SK899

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Max

150 °C

Manufacturer Part Number

2SK899

Turn-on Time-Max (ton)

195 ns

Package Shape

RECTANGULAR

Manufacturer

Fuji Electric Co Ltd

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

FUJI ELECTRIC CO LTD

Turn-off Time-Max (toff)

570 ns

Risk Rank

5.82

Part Package Code

TO-3P

Drain Current-Max (ID)

18 A

子类别

FET 通用电源

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

引脚数量

3

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

操作模式

增强型MOSFET

晶体管应用

SWITCHING

极性/通道类型

N-CHANNEL

最大漏极电流 (Abs) (ID)

18 A

漏极-源极导通最大电阻

0.33 Ω

脉冲漏极电流-最大值(IDM)

72 A

DS 击穿电压-最小值

500 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

125 W

环境耗散-最大值

125 W