FUJITSU Limited 2MBI150VA-060-50
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2MBI150VA-060-50
922-2MBI150VA-060-50
晶体管 - IGBT - 单个
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大陆
立即发货

Insulated Gate Bipolar Transistor,
1最小包装量--
2MBI150VA-060-50详情
FUJITSU Limited 2MBI150VA-060-50重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
材料
Sm/AlNiCo alloy with Ni-Cu-Ni coating
终端数量
7
晶体管元件材料
SILICON
外壳材料
2
Part Life Cycle Code
活跃
Ihs Manufacturer
FUJITSU LTD
Package Description
FLANGE MOUNT, R-XUFM-X7
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Turn-off Time-Nom (toff)
600 ns
Turn-on Time-Nom (ton)
650 ns
Gross Weight
6.21
Transport Packaging Size/Quantity
28.5*21*19/1000
Residual Magnetic Induction
Br - 1.17…1.22 T (11.7…12.2 kG)
Coercive Force
by magnetic induction Hcb/ by magnetization Hcj - not less than 868/955 kA/m
Maximum Energy Product
BHmax - 263…287 kJ/m³
Maximum Operating Temperature
Tmax - 80 °C
ECCN 代码
EAR99
类型
RUICHI Samarium Cobalt Disc Magnet
端子位置
UPPER
终端形式
UNSPECIFIED
Reach合规守则
compliant
JESD-30代码
R-XUFM-X7
配置
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
箱体转运
ISOLATED
晶体管应用
MOTOR CONTROL
极性/通道类型
N-CHANNEL
集电极电流-最大值(IC)
150 A
集电极-发射器电压-最大值
600 V
职系
N35 (normal)
高度
5 mm
直径
15 mm
2MBI150VA-060-50拓展信息







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