GeneSiC Semiconductor G2R120MT33J

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

TO-263-7

厂商

GeneSiC Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

35A

Drive Voltage (Max Rds On, Min Rds On)

20V

Power Dissipation (Max)

-

Base Product Number

G2R120

Continuous Drain Current Id

35A

Vds - Drain-Source Breakdown Voltage

3.3 kV

Typical Turn-On Delay Time

96 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

366 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Forward Transconductance - Min

5.8 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

130 nC

Rds On - Drain-Source Resistance

120 mOhms

RoHS

Details

Typical Turn-Off Delay Time

35 ns

Id - Continuous Drain Current

34 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

类型

SiC MOSFET

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

402W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

156mOhm @ 20A, 20V

不同 Id 时 Vgs(th)（最大值）

-

输入电容(Ciss)(Max)@Vds

3706 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

145 nC @ 20 V

上升时间

26 ns

漏源电压 (Vdss)

3300 V

Vgs（最大值）

+25V, -10V

产品类别

MOSFET

晶体管类型

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET