GeneSiC Semiconductor G3R12MT12K

安装类型

通孔

包装/外壳

TO-247-4

供应商器件包装

TO-247-4

厂商

GeneSiC Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

157A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Power Dissipation (Max)

567W (Tc)

Base Product Number

G3R12M

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

567 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

288 nC

Rds On - Drain-Source Resistance

12 mOhms

RoHS

Details

Id - Continuous Drain Current

111 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

13mOhm @ 100A, 18V

不同 Id 时 Vgs(th)（最大值）

2.7V @ 50mA

输入电容(Ciss)(Max)@Vds

9335 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

288 nC @ 15 V

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+22V, -10V

产品类别

MOSFET

场效应管特性

-

产品

MOSFET

产品类别

MOSFET