GeneSiC Semiconductor G3R160MT12J

包装/外壳

QFN

安装类型

表面贴装

供应商器件包装

TO-263-7

Standard Frequency

50

Operating Temp Range

-20C to 70C

Operating Supply Voltage (Max)

2.75(V)

Operating Supply Voltage (Min)

2.25(V)

Programmable

无

Continuous Drain Current Id

22A

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

110 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 5 V, + 15 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Forward Transconductance - Min

4.4 S

Channel Mode

Enhancement

Manufacturer

GeneSiC Semiconductor

Brand

GeneSiC Semiconductor

Qg - Gate Charge

23 nC

Rds On - Drain-Source Resistance

160 mOhms

RoHS

Details

Typical Turn-Off Delay Time

10 ns

Id - Continuous Drain Current

19 A

Package

Tube

Base Product Number

G3R160

Current - Continuous Drain (Id) @ 25℃

19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

厂商

GeneSiC Semiconductor

Power Dissipation (Max)

128W (Tc)

Product Status

活跃

包装

Bulk

系列

G3R

操作温度

-55°C ~ 175°C (TJ)

类型

CLOCK OSCILLATOR

子类别

MOSFETs

技术

SiC

频率稳定性

±10(ppm)

对称性-最大值

55(%)

配置

Single

通道数量

1 Channel

功率耗散

128W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

208mOhm @ 10A, 15V

不同 Id 时 Vgs(th)（最大值）

2.7V @ 5mA (Typ)

输入电容(Ciss)(Max)@Vds

724 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

23 nC @ 15 V

上升时间

9 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+20V, -10V

产品类别

MOSFET

晶体管类型

MOSFET

信道型

N通道

场效应管特性

-

产品

MOSFET

产品类别

MOSFET