参数名
参数值
参数名
参数值
包装/外壳
SOT-23-3
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
5.6 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Qualification
AEC-Q101
Pd - Power Dissipation
500 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
9000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
4.6 S
Channel Mode
Enhancement
Part # Aliases
SP000928942 BSS308PEH6327XTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Qg - Gate Charge
5 nC
Rds On - Drain-Source Resistance
62 mOhms
RoHS
Details
Typical Turn-Off Delay Time
15.3 ns
Id - Continuous Drain Current
2 A
系列
BSS308
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
7.7 ns
产品类别
MOSFET
晶体管类型
1 P-Channel
产品类别
MOSFET
宽度
1.3 mm
高度
1.1 mm
长度
2.9 mm