Harris HGTP20N60B3D

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Manufacturer Part Number

HGTP20N60B3D

Part Life Cycle Code

Obsolete

Ihs Manufacturer

HARRIS SEMICONDUCTOR

Package Description

FLANGE MOUNT, R-PSFM-T3

Risk Rank

5.63

Number of Elements

1

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Rise Time-Max (tr)

20 ns

Turn-off Time-Max (toff)

275 ns

Turn-off Time-Nom (toff)

220 ns

Turn-on Time-Max (ton)

25 ns

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSFM-T3

资历状况

不合格

配置

SINGLE WITH BUILT-IN DIODE

箱体转运

COLLECTOR

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-247

集电极电流-最大值(IC)

40 A

集电极-发射器电压-最大值

600 V

栅极-发射极电压-最大值

20 V

VCEsat-最大值

2 V

栅极-发射极Thr电压-最大值

6 V

环境耗散-最大值

165 W

最大下降时间 (tf)

200 ns