Harris HUF75329P3

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220-3

Package

Tube

Current - Continuous Drain (Id) @ 25℃

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Harris Corporation

Power Dissipation (Max)

128W (Tc)

Product Status

Obsolete

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250µA

操作温度

-55°C ~ 175°C (TJ)

系列

UltraFET™

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

24mOhm @ 49A, 10V

输入电容(Ciss)(Max)@Vds

1060 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

75 nC @ 20 V

漏源电压 (Vdss)

55 V

Vgs（最大值）

±20V

场效应管特性

-