RFD16N05LSM详情
HARRIS RFD16N05LSM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252AA
Package
Tube
Base Product Number
RFD16
Current - Continuous Drain (Id) @ 25℃
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
厂商
Harris Corporation
Power Dissipation (Max)
60W (Tc)
Product Status
Obsolete
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2V @ 250mA
操作温度
-55°C ~ 150°C (TJ)
系列
-
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
47mOhm @ 16A, 5V
门极电荷(Qg)(最大)@Vgs
80 nC @ 10 V
漏源电压 (Vdss)
50 V
Vgs(最大值)
±10V
场效应管特性
-
RFD16N05LSM拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation








哦! 它是空的。