Harris Corporation IRF822R

包装/外壳

TO-220-3

安装类型

通孔

供应商器件包装

TO-220AB

Power Dissipation (Max)

50W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

2.2A (Tc)

Product Status

活跃

Package

Bulk

厂商

Harris Corporation

操作温度

-55°C ~ 150°C (TJ)

系列

-

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4Ohm @ 1.4A, 10V

输入电容(Ciss)(Max)@Vds

360 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

19 nC @ 10 V

漏源电压 (Vdss)

500 V

Vgs（最大值）

±20V

场效应管特性

-