Harris Corporation IRFD1Z3
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IRFD1Z3
1050-IRFD1Z3
晶体管 - FET,MOSFET - 单个
4-DIP (0.300", 7.62mm)
大陆
立即发货

SMALL SIGNAL N-CHANNEL MOSFET
1最小包装量--
IRFD1Z3详情
Harris Corporation IRFD1Z3重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
包装/外壳
4-DIP (0.300", 7.62mm)
安装类型
通孔
供应商器件包装
4-DIP, Hexdip
厂商
Harris Corporation
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Power Dissipation (Max)
1W (Tc)
系列
-
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3.2Ohm @ 250mA, 10V
输入电容(Ciss)(Max)@Vds
50 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
3 nC @ 10 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
场效应管特性
-
IRFD1Z3拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







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