Harris Corporation RF1S30P06SM9A
- 收藏
- 对比
RF1S30P06SM9A
1050-RF1S30P06SM9A
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

P-CHANNEL POWER MOSFET
1最小包装量--
RF1S30P06SM9A详情
Harris Corporation RF1S30P06SM9A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
TO-263AB
Current - Continuous Drain (Id) @ 25℃
30A (Tc)
Product Status
活跃
Package
Bulk
厂商
Harris Corporation
Power Dissipation (Max)
135W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On)
10V
系列
-
操作温度
-55°C ~ 175°C (TJ)
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
65mOhm @ 30A, 10V
输入电容(Ciss)(Max)@Vds
3200 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
170 nC @ 20 V
漏源电压 (Vdss)
60 V
Vgs(最大值)
±20V
场效应管特性
-
RF1S30P06SM9A拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







哦! 它是空的。