Harris Corporation RF1S4N100SM9A
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RF1S4N100SM9A
1050-RF1S4N100SM9A
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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MOSFET N-CH 1000V 4.3A TO263AB
1最小包装量--
RF1S4N100SM9A详情
Harris Corporation RF1S4N100SM9A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
TO-263AB
厂商
Harris Corporation
Current - Continuous Drain (Id) @ 25℃
4.3A (Tc)
Product Status
活跃
Package
Bulk
Power Dissipation (Max)
150W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
系列
-
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3.5Ohm @ 2.5A, 10V
漏源电压 (Vdss)
1000 V
Vgs(最大值)
±20V
场效应管特性
-
RF1S4N100SM9A拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







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