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价格梯度
内地含税价
1
¥13.656336
10
¥12.883334
100
¥12.154091
500
¥11.466124
1000
¥10.817097
Harris Corporation RF1S630SM
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- 对比
RF1S630SM
1050-RF1S630SM
晶体管 - FET,MOSFET - 单个
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
大陆
立即发货

N-CHANNEL POWER MOSFET
--最小包装量--
¥
总价: ¥
RF1S630SM详情
Harris Corporation RF1S630SM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
供应商器件包装
TO-263AB
厂商
Harris Corporation
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Power Dissipation (Max)
75W (Tc)
系列
-
操作温度
-55°C ~ 150°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
400mOhm @ 5A, 10V
输入电容(Ciss)(Max)@Vds
600 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
30 nC @ 10 V
漏源电压 (Vdss)
200 V
Vgs(最大值)
±20V
场效应管特性
-
RF1S630SM拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation






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