Harris Corporation RFD3N08L
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RFD3N08L
1050-RFD3N08L
晶体管 - FET,MOSFET - 单个
TO-251-3 Short Leads, IPak, TO-251AA
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
RFD3N08L详情
Harris Corporation RFD3N08L重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-251-3 Short Leads, IPak, TO-251AA
供应商器件包装
I-PAK
厂商
Harris Corporation
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.5V @ 250μA
Power Dissipation (Max)
30W (Tc)
系列
-
操作温度
-55°C ~ 175°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
800mOhm @ 1.5A, 5V
门极电荷(Qg)(最大)@Vgs
8 nC @ 10 V
漏源电压 (Vdss)
80 V
Vgs(最大值)
±10V
场效应管特性
-
RFD3N08L拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







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