Harris Corporation RFD8P06ESM
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RFD8P06ESM
1050-RFD8P06ESM
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

P-CHANNEL POWER MOSFET
1最小包装量--
RFD8P06ESM详情
Harris Corporation RFD8P06ESM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
安装类型
表面贴装
供应商器件包装
TO-252-3 (DPAK)
Power Dissipation (Max)
-
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
-
Drive Voltage (Max Rds On, Min Rds On)
-
Current - Continuous Drain (Id) @ 25℃
8A
Product Status
活跃
Package
Bulk
厂商
Harris Corporation
操作温度
-
系列
-
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
-
漏源电压 (Vdss)
60 V
Vgs(最大值)
-
场效应管特性
-
RFD8P06ESM拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







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