Harris Corporation RFG75N05E
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RFG75N05E
1050-RFG75N05E
晶体管 - FET,MOSFET - 单个
TO-247-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
RFG75N05E详情
Harris Corporation RFG75N05E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
通孔
包装/外壳
TO-247-3
供应商器件包装
TO-247
Product Status
活跃
Package
Bulk
厂商
Harris Corporation
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
75A (Tc)
Power Dissipation (Max)
240W (Tc)
系列
-
操作温度
-55°C ~ 175°C (TJ)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
8mOhm @ 75A, 10V
门极电荷(Qg)(最大)@Vgs
400 nC @ 20 V
漏源电压 (Vdss)
50 V
Vgs(最大值)
±20V
场效应管特性
-
RFG75N05E拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation







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