Harris Corporation RFP4N05
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RFP4N05
1050-RFP4N05
晶体管 - FET,MOSFET - 单个
TO-220-3
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
RFP4N05详情
Harris Corporation RFP4N05重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-220-3
安装类型
通孔
供应商器件包装
TO-220
Power Dissipation (Max)
25W (Tc)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25℃
4A (Tc)
Product Status
活跃
Package
Bulk
厂商
Harris Corporation
操作温度
-55°C ~ 150°C (TJ)
系列
-
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
800mOhm @ 4A, 10V
输入电容(Ciss)(Max)@Vds
200 pF @ 25 V
漏源电压 (Vdss)
50 V
Vgs(最大值)
±20V
场效应管特性
-
RFP4N05拓展信息
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
Harris Corporation
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