IDEC LB6GL-M1T11W

包装/外壳

TO-220-3

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

3.5 V

Pd - Power Dissipation

36 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Forward Transconductance - Min

15.5 S

Channel Mode

Enhancement

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

48 nC

Tradename

SuperFET II

Rds On - Drain-Source Resistance

260 mOhms

RoHS

Details

Typical Turn-Off Delay Time

13 ns

Id - Continuous Drain Current

15 A

Manufacturer Part Number

LB6GL-M1T11W

系列

FCPF260N60E

包装

Tube

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

11 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品

MOSFET

产品类别

MOSFET

宽度

4.9 mm

高度

16.07 mm

长度

10.36 mm