2N7002DWH6327XT详情
Infineon 2N7002DWH6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-363-6
底架
表面贴装
引脚数
6
Factory Pack QuantityFactory Pack Quantity
5000
Manufacturer
Micro Commercial Components (MCC)
Brand
Micro Commercial Components (MCC)
RoHS
Details
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
3 ns, 3 ns
Vgs th - Gate-Source Threshold Voltage
1.5 V
Qualification
AEC-Q101
Pd - Power Dissipation
500 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.000265 oz
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Forward Transconductance - Min
200 mS, 200 mS
Channel Mode
Enhancement
Part # Aliases
SP000917596 2N7002DWH6327XTSA1
Qg - Gate Charge
600 pC
Rds On - Drain-Source Resistance
1.6 Ohms
Typical Turn-Off Delay Time
5.5 ns, 5.5 ns
Id - Continuous Drain Current
300 mA
Turn Off Delay Time
5.5 ns
包装
切割胶带
系列
2N7002
最高工作温度
150 °C
最小工作温度
-55 °C
子类别
MOSFETs
最大功率耗散
500 mW
技术
Si
配置
Dual
通道数量
2 Channel
元素配置
Dual
功率耗散
500 mW
接通延迟时间
3 ns
上升时间
3.3 ns, 3.3 ns
漏源电压 (Vdss)
60 V
产品类别
MOSFET
晶体管类型
2 N-Channel
连续放电电流(ID)
300 mA
栅极至源极电压(Vgs)
20 V
漏源击穿电压
60 V
输入电容
13 pF
最大结点温度(Tj)
150 °C
漏源电阻
1.6 Ω
产品类别
MCC
宽度
1.25 mm
高度
0.9 mm
长度
2 mm
2N7002DWH6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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