参数名
参数值
参数名
参数值
包装/外壳
SOT-89-4
RoHS
Compliant
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
3 W
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
100
Collector-Emitter Saturation Voltage
500 mV
Minimum Operating Temperature
- 65 C
Factory Pack QuantityFactory Pack Quantity
5000
Mounting Styles
SMD/SMT
Gain Bandwidth Product fT
100 MHz
Part # Aliases
SP001125488 BCX6816H6327XTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Maximum DC Collector Current
2 A
DC Current Gain hFE Max
250
Collector- Emitter Voltage VCEO Max
20 V
系列
BCX68
包装
Reel
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
25 V
连续集电极电流
1 A
产品类别
Bipolar Transistors - BJT
长度
60 mm
达到SVHC
无SVHC