Infineon BF2030E6814

包装/外壳

SOT-143

表面安装

YES

Vds - Drain-Source Breakdown Voltage

8 V

Pd - Power Dissipation

200 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

6 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Depletion

Part # Aliases

SP000012219 BF2030E6814HTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Id - Continuous Drain Current

40 mA

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

BF2030-E6814

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

5.84

系列

BF2030

包装

MouseReel

ECCN 代码

EAR99

类型

射频小信号MOSFET

子类别

MOSFETs

技术

Si

Reach合规守则

unknown

配置

单双闸门

操作模式

DUAL GATE, ENHANCEMENT MODE

极性/通道类型

N-CHANNEL

产品类别

射频MOSFET晶体管

最大漏极电流 (Abs) (ID)

0.04 A

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

0.2 W

产品类别

射频MOSFET晶体管

宽度

1.3 mm

高度

1 mm

长度

2.9 mm