Infineon BSC018N04LSGXT

包装/外壳

TDSON-8

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

90 S

Channel Mode

Enhancement

Part # Aliases

BSC018N04LS G SP000388293 BSC018N04LSGATMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

150 nC

Rds On - Drain-Source Resistance

1.5 mOhms

Typical Turn-Off Delay Time

55 ns

Id - Continuous Drain Current

100 A

包装

Reel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

7.4 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5.15 mm

高度

1.27 mm

长度

5.9 mm