BSC019N02KSGXT/SAMPLE详情
Infineon BSC019N02KSGXT/SAMPLE重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
26 Weeks
表面安装
YES
终端数量
5
晶体管元件材料
SILICON
Continuous Drain Current Id
30
Package Description
SMALL OUTLINE, R-PDSO-F5
Package Style
小概要
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Manufacturer Part Number
BSC019N02KSGXT/SAMPLE
Package Shape
RECTANGULAR
Manufacturer
Infineon Technologies AG
Number of Elements
1
Part Life Cycle Code
活跃
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Risk Rank
5.69
Drain Current-Max (ID)
30 A
ECCN 代码
EAR99
附加功能
雪崩 额定
端子位置
DUAL
终端形式
FLAT
Reach合规守则
compliant
JESD-30代码
R-PDSO-F5
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.003 Ω
脉冲漏极电流-最大值(IDM)
200 A
DS 击穿电压-最小值
20 V
信道型
N
雪崩能量等级(Eas)
800 mJ
场效应管技术
METAL-OXIDE SEMICONDUCTOR
BSC019N02KSGXT/SAMPLE拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








哦! 它是空的。