Infineon BSC252N10NSFGXT

包装/外壳

TDSON-8

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

78 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004260 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

18 S

Channel Mode

Enhancement

Part # Aliases

BSC252N10NSF G SP000379608 BSC252N10NSFGATMA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

17 nC

Rds On - Drain-Source Resistance

19.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

16 ns

Id - Continuous Drain Current

40 A

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

21 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

5.15 mm

高度

1.27 mm

长度

5.9 mm