Infineon BSS314PEH6327XT

包装/外壳

SOT-23-3

材料

Polyurethane Foam, Nickel-Copper Polyester (NI/CU)

形状

Rectangle

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

5.1 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Qualification

AEC-Q101

Pd - Power Dissipation

500 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

9000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

3 S

Channel Mode

Enhancement

Part # Aliases

SP000928944 H6327 BSS314PE BSS314PEH6327XTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

2.9 nC

Rds On - Drain-Source Resistance

107 mOhms

RoHS

Details

Typical Turn-Off Delay Time

12.4 ns

Id - Continuous Drain Current

1.5 A

操作温度

--

系列

--

包装

MouseReel

零件状态

活跃

类型

泡沫外覆织物

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

镀层

--

附着方法

--

上升时间

3.9 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品类别

MOSFET

宽度

0.500 (12.70mm)

高度

0.252 (6.40mm)

长度

96.000 (243.84cm)

电镀厚度

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