Infineon BSS83PH6327XT

包装/外壳

SOT-23-3

Package

Bag

Base Product Number

DJT16E25

厂商

TE Connectivity Deutsch 连接器

Product Status

Obsolete

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

23 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Qualification

AEC-Q101

Pd - Power Dissipation

360 mW

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

9000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

0.24 S

Channel Mode

Enhancement

Part # Aliases

H6327 SP000702486 BSS83P BSS83PH6327XTSA1

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

2.38 nC

Rds On - Drain-Source Resistance

1.4 Ohms

RoHS

Details

Typical Turn-Off Delay Time

56 ns

Id - Continuous Drain Current

330 mA

系列

*

包装

MouseReel

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

上升时间

71 ns

产品类别

MOSFET

晶体管类型

1 P-Channel

产品

MOSFET小信号

产品类别

MOSFET

宽度

1.3 mm

高度

1.1 mm

长度

2.9 mm