BSS84PWH6327XT详情
Infineon BSS84PWH6327XT重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-323-3
Vds - Drain-Source Breakdown Voltage
60 V
Typical Turn-On Delay Time
6.7 ns
Vgs th - Gate-Source Threshold Voltage
2 V
Qualification
AEC-Q101
Pd - Power Dissipation
300 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.000212 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
18000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
80 mS
Channel Mode
Enhancement
Part # Aliases
BSS84PW SP000917564 H6327 BSS84PWH6327XTSA1
Manufacturer
Infineon
Brand
Infineon Technologies
Qg - Gate Charge
1.5 nC
Rds On - Drain-Source Resistance
4.6 Ohms
RoHS
Details
Typical Turn-Off Delay Time
8.6 ns
Id - Continuous Drain Current
150 mA
包装
MouseReel
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
上升时间
16.2 ns
产品类别
MOSFET
晶体管类型
1 P-Channel
产品类别
MOSFET
宽度
1.25 mm
高度
0.9 mm
长度
2 mm
BSS84PWH6327XT拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies








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